Image sensor and manufacturing method thereof
US10367018B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Jan 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and includes a storage node, a gate dielectric layer, a storage gate electrode, and etch stop layer, a shielding layer, and a protection layer. The gate dielectric layer is over the storage node. The storage gate electrode is over the gate dielectric layer. The etch stop layer covers the gate dielectric layer and the storage gate electrode. The shielding layer is over the storage gate electrode. The protection layer is sandwiched between the etch stop layer and the shielding layer. The driving circuit is adjacent to the storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.