Silicon carbide semiconductor device, power module, and power conversion device
US10367090B2 · kind B2 · utility
1Cited by
2References
12Claims
0Family size
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Key dates
| Filing date | Jul 2, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Jul 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
Provided is a silicon carbide semiconductor device in which SiC-MOSFETs are formed within an active region of an n-type silicon carbide semiconductor substrate, and a p+-type semiconductor region is formed on an upper surface of an epitaxial layer so as to surround the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.