Schottky diode and method of manufacturing the same

US10367101B2 · kind B2 · utility

Assignee

• GPOWER SEMICONDUCTOR, INC. · CN

Inventor

• Hongwei Chen · Hangzhou City, CN

Key dates

• Filing date: Apr 30, 2018
• Grant date: Jul 30, 2019
• Expiry date: Apr 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/47

Abstract

A Schottky diode comprises: a substrate; a first semiconductor layer located on the substrate; a second semiconductor layer located on the first semiconductor layer, two-dimensional electron gas being formed at an interface between the first semiconductor layer and the second semiconductor layer; a cathode located on the second semiconductor layer and forming an ohmic contact with the second semiconductor layer; a first passivation dielectric layer located on the second semiconductor layer; a field plate groove formed in the first passivation dielectric layer; and an anode covering the field plate groove and a portion of the first passivation dielectric layer, wherein a distance between a bottom surface of the field plate groove and the two-dimensional electron gas in a height direction is greater than 5 nm.