Light-emitting diode
US10367118B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2016 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.