Pixel structure and method for the fabrication thereof
US10367128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2017 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Jul 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a pixel structure and method for the fabrication thereof including: providing a substrate; forming a black photoresist layer having a receiving cavity and an isolation region on the substrate; coating a polyelectrolyte solution on the surface of the black photoresist layer except the isolation region, and air-dried to form a polyelectrolyte layer; coating a metal nanoparticle solution on the surface of the polyelectrolyte layer, and air-dried to form a metal particle layer; and aligning and transferring a micro light emitting diodes to the black photoresist layer. In the above-described manner, the present disclosure can improve the light utilization efficiency of the micro light emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.