Method of manufacturing semiconductor device
US10373831B2 · kind B2 · utility
1Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Jul 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67769
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.