Semiconductor device and method for manufacturing the same
US10373833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2016 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Feb 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a larger bandgap than the first GaN-based semiconductor layer, a source electrode provided on the second GaN-based semiconductor layer, a drain electrode provided on the second GaN-based semiconductor layer, a recess provided between the source electrode and the drain electrode in the second GaN-based semiconductor layer, a gate insulating film provided on a surface of the recess, and a gate electrode provided on the gate insulating film and having an end portion in a gate width direction, located in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.