Display device using micro light emitting diode
US10373985B2 · kind B2 · utility
18Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display device includes a display substrate; a thin film transistor over the display substrate; a bank layer covering the thin film transistor, where an opening is defined through the bank layer; an emission layer in the opening and including a micro p-n diode; a first electrode electrically connected between the thin film transistor and the emission layer; a second electrode over the emission layer; and a sealing layer covering the second electrode. The thin film transistor and the emission layer are adjacent to each other in a horizontal direction of the display substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.