Semiconductor light emitting device and LED module using the same
US10374003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Dec 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.