Optoelectronic device including a buried metal grating for extraordinary optical transmission (EOT)
US10374105B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2016 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Apr 20, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device includes an etched body comprising a buried metal contact layer on a top surface of a semiconductor structure, which comprises one or more semiconductor layers. The buried metal contact layer includes an arrangement of holes therein. A plurality of nanopillar structures protrude from the top surface of the semiconductor structure and pass through the arrangement of holes. Each nanopillar structure is surrounded at a base thereof by a portion of the buried metal contact layer. When the etched body is exposed to incident radiation having a wavelength in the range from about 300 nm to about 10 microns, at least about 50% of the incident radiation is transmitted through the etched body at a peak transmission wavelength λmax.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.