Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

US10374114B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Jordi Teva · Eindhoven, NL
• Frederic Roger · Santa Clara, US
• Ewald Stueckler · Graz, AT
• Stefan Jessenig · Graz, AT
• Rainer Minixhofer · Kufstein, AT
• Ewald Wachmann · Kainbach, AT
• Martin Schrems · Langenbruck, DE
• Guenther KOPPITSCH · Lieboch, AT

Key dates

• Filing date: Mar 11, 2014
• Grant date: Aug 6, 2019
• Expiry date: Sep 4, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.