Silver bonding wire for semiconductor device containing indium, gallium, and/or cadmium
US10381320B2 · kind B2 · utility
3Cited by
0References
18Claims
0Family size
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Key dates
| Filing date | May 20, 2015 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | May 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.