Electrostatic discharge protection with integrated diode
US10381340B2 · kind B2 · utility
4Cited by
11References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 26, 2016 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Dec 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus can include a first circuit that is configured to provide electrostatic discharge (ESD) protection against an ESD pulse applied between a first node and a second node. The first circuit includes a series stack of bipolar transistors that are configured to shunt current between the first and second nodes in response to the ESD pulse; and a diode connected in series with the stack of bipolar transistors and configured to lower a snapback holding voltage of the first circuit when shunting current between the first and second nodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.