Electrostatic protection device of LDMOS silicon controlled structure

US10381343B2 · kind B2 · utility

Assignee

• CSMC TECHNOLOGIES FAB2 CO., LTD. · CN

Inventors

• Jun Sun · Hefei, CN
• Zhongyu Lin · Wuxi, CN
• Guangyang Wang · 安丰镇, CN
• Guipeng Sun · Xinwu District, CN

Key dates

• Filing date: Apr 29, 2016
• Grant date: Aug 13, 2019
• Expiry date: Apr 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/151

Abstract

An electrostatic protection device of an LDMOS silicon controlled structure comprises a P-type substrate (310), an N-well (320) and a P-well (330) on the substrate, a gate electrode (340) overlapping on the P-well (330) and extending to an edge of the N-well (320), a first N+ structure and a first P+ structure provided in the N-well (320), and a second N+ structure and a second P+ structure provided in the P-well (330), the first N+ structure being a drain electrode N+ structure (322), the first N+ structure being a drain electrode N+ structure (322), the first P+ structure being a drain electrode P+ structure (324), the second N+ structure being a source electrode N+ structure (332), the second P+ structure being a source P+ structure (334), and a distance from the drain electrode P+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode N+ structure (322) to the gate electrode (340).