Semiconductor device including resistor structure
US10381345B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Jan 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device having an enhanced characteristic and a resistor structure satisfying a desired target resistor value of a resistor device. A semiconductor device includes: a lower interlayer insulating layer disposed on a substrate comprising a resistor area; a resistor structure comprising a resistor layer and an etch stop pattern sequentially stacked on the lower interlayer insulating layer of the resistor area; an upper interlayer insulating layer configured to cover the resistor structure and disposed on the lower interlayer insulating layer; a resistor contact structure configured to pass through the upper interlayer insulating layer and the etch stop pattern and contact the resistor layer; and a resistor contact spacer disposed between the upper interlayer insulating layer, the etch stop pattern, and the resistor contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.