Solid-state imaging device and imaging system
US10381388B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Feb 23, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/448
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes a plurality of pixels each including a photoelectric converter that generates charges by photoelectric conversion and a charge holding portion that holds charges transferred from the photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type provided in a surface portion of a semiconductor substrate, a second semiconductor region of a second conductivity type provided under the first semiconductor region and configured to accumulate generated charges, a third semiconductor region of the first conductivity type provided under the second semiconductor region, and a fourth semiconductor region of the first conductivity type provided in a part of a portion between the first and second semiconductor regions. In a plan view, the second semiconductor region has a first region not overlapping with the third semiconductor region, and the fourth semiconductor region overlaps with at least a part of the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.