Semiconductor device and method for manufacturing the same
US10381460B2 · kind B2 · utility
3Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2017 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Jan 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region disposed in the well region, a gate electrode disposed above the well region, a thin gate insulating layer and a thick gate insulating layer disposed under the gate electrode, the thick gate insulating layer being disclosed closer to the drain region than the thin gate insulating layer, and an extended drain junction region disposed below the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.