Voltage-tunable wavelength-agile 2D material-based light-emitting transistors

US10381506B1 · kind B1 · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• Carlos Torres · Houston, US
• James R. Adleman · San Diego, US
• Ryan P. Lu · San Diego, US
• Ayax D. Ramirez · Chula Vista, US

Key dates

• Filing date: May 23, 2018
• Grant date: Aug 13, 2019
• Expiry date: May 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/833

Abstract

An optoelectronic device is provided that includes a doped substrate, a tunneling barrier, a direct bandgap two dimensional semiconductor material, a hot electron emitter, a gate electrode, and a voltage bias. The hot electron emitter injects hot electrons from the underlying substrate into the conduction band of the direct bandgap two dimensional semiconductor material via quantum tunneling. The gate electrode is operable to provide the voltage bias in a direction normal to the X-Y plane of the direct bandgap two dimensional semiconductor material so as to generate an electric field perpendicular to the direct bandgap two dimensional semiconductor material. The voltage bias provided by the gate is operable to change an optical bandgap of the direct bandgap two dimensional semiconductor material continuously from the visible to the mid-infrared spectral regime via an electric dipole layer enhanced Giant Stark Effect for electrically-tunable hot electron luminescence applications.