Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

US10381515B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Fabian Kopp · Bukit Mertajam, MY
• Attila Molnar · Vadnais Heights, US

Key dates

• Filing date: Mar 29, 2018
• Grant date: Aug 13, 2019
• Expiry date: Mar 29, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

An optoelectronic chip includes a semiconductor layer sequence including at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer, wherein the p-doped semiconductor layer is electrically contacted by a p-connection contact, the n-doped semiconductor layer is electrically contacted by an n-connection contact, the semiconductor chip has at least two trenches, the p-connection contact is located within the first trench and the n-connection contact is located within the second trench, below the p-connection contact and within the first trench a first dielectric mirror element is arranged, which is electrically insulated, and below the n-connection contact and within the second trench and between the n-connection contact and the n-doped semiconductor layer, a second dielectric mirror element is arranged at least in regions, the second dielectric mirror element being electrically insulated.