Patent · US Active

Light emitting device

US10381802B2 · kind B2 · utility

0Cited by
1References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 22, 2016
Grant dateAug 13, 2019
Priority date
Expiry dateSep 22, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/17
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The invention describes a light emitting device (100). The light emitting device (100) comprises at least one light emitting structure (110), at least one processing layer (120) and at least one optical structure (130). The optical structure (130) comprises at least one material processed by means of processing light (150). The at least one processing layer (120) is arranged to reduce reflection of the processing light (150) in a direction of the optical structure (130) at least by 50%, preferably at least by 80%, more preferably at least by 95% and most preferably at least by 99% during processing of the material by means of the processing light (150). It is a basic idea of the present invention to incorporate a non- or low-reflective processing layer (120) on top of a light emitting structure (110) like a VCSEL array in order to enable on wafer processing of light emitting structures (130) like microlens arrays. The invention further describes a method of manufacturing such a light emitting device (100).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.