Patent · US Active

Overvoltage protection of transistor devices

US10381828B1 · kind B1 · utility

2Cited by

1References

14Claims

0Family size

Assignee

Dialog Semiconductor (UK) Limited · GB

Inventors

Horst Knoedgen · Munich, DE
Christoph Nagl · Graz, AT
Nebojsa Jelaca · Graz, AT

Key dates

Filing date	Jan 29, 2018
Grant date	Aug 13, 2019
Priority date	—
Expiry date	Jan 29, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/47
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An overvoltage protection circuit for a transistor device is presented. The overvoltage protection circuit comprises a first pin coupled to a gate terminal of the transistor device, an electrostatic discharge protection circuit coupled between a second pin and a source terminal of the transistor device, a first diode coupled between the first pin and the second pin, and a second diode coupled in parallel to the first diode between the first pin and the second pin. The forward direction of the first diode is opposite to the forward direction of the second diode. In addition, A method of measuring a gate leakage current of a transistor device and a method of bonding a transistor device coupled to such an overvoltage protection circuit are presented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.