Amplifiers and amplifier modules with shunt inductance circuits that include high-Q capacitors
US10381984B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2017 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Dec 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/82
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.