Patent · US Active

BICMOS-based transceiver for millimeter wave frequency applications

US10382083B2 · kind B2 · utility

0Cited by

10References

19Claims

0Family size

Assignee

Integrated Device Technology, Inc. · US

Inventors

Andrea Betti-Berutto · Menlo Park, US
Sushil Kumar · Center Valley, US
Shawn Parker · Santa Clara, US
Jonathan Kennedy · Grass Valley, US
Christopher Saint · Colfax, US
Michael J. Shaw · Centreville, US
James Little · Farnborough, GB
Jeff Illgner · Grass Valley, US

Key dates

Filing date	Aug 30, 2018
Grant date	Aug 13, 2019
Priority date	—
Expiry date	Aug 30, 2038

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02D30/70
WIPO fieldTelecommunications
WIPO sectorElectrical engineering

Abstract

An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.