Semiconductor device and method for fabricating the same
US10387500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Feb 5, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fin, first to fourth gate electrodes, first and second storage devices, first and second search terminals, and first and second dummy search terminals. The fin extend in a first direction. The gate electrodes intersecting the fin. The storage devices are connected with the gate electrodes. The first search terminal is connected with the second gate electrode and is spaced from the fin by a first distance. The second search terminal is connected with the third gate electrode and is spaced from the fin by a second distance different from the first distance. The first dummy search terminal is connected with the second gate electrode and is spaced from the fin by the second distance. The second dummy search terminal is connected with the third gate electrode and is spaced from the fin by the first distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.