Hybrid memory cell unit and recurrent neural network including hybrid memory cell units
US10387769B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 10, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Aug 18, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/09
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A recurrent neural network including an input layer, a hidden layer, and an output layer, wherein the hidden layer includes hybrid memory cell units, each of the hybrid memory cell units including a first memory cells of a first type, the first memory cells being configured to remember a first cell state value fed back to each of gates to determine a degree to which each of the gates is open or closed, and configured to continue to update the first cell state value, and a second memory cells of a second type, each second memory cell of the second memory cells including a first time gate configured to control a second cell state value of the second memory cell based on phase signals of an oscillatory frequency, and a second time gate configured to control an output value of the second memory cell based on the phase signals, and each second memory cell of the second memory cells being configured to remember the second cell state value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.