Etched spin-qubit for high temperature operation
US10387792B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/122
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A device for storing and/or transferring quantum data. The device has a plurality of elongate semiconductor structures arranged in side by said with each elongate semiconductor structure having a quantum well layer of one semiconductor material disposed between upper and lower layers of a different semiconductor material which share the same or essentially the same crystalline structure as that of the quantum well layer. Neighboring ones of the elongate semiconductor structures share a region forming a constriction between the neighboring ones of the elongate semiconductor structures. Also disclosed is a a method of adjusting exchange coupling between laterally coupled quantum wells in a quantum device having sidewalls, the method including: defining the sidewalls by etching a crystalline structure along lattice planes of said crystalline structure, the crystalline structure, after the sidewalls are etched, having a corrugated shaped with protuberances and grooves on opposing major surfaces thereof, and controlling a ratio of the distances (i) between opposing grooves on the opposing major surfaces of the crystalline structure and (ii) between opposing protuberances on the opposing…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.