Manufacturing method of oxide semiconductor
US10388520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2014 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Apr 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.