Self-aligned insulated film for high-k metal gate device
US10388531B2 · kind B2 · utility
1Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Sep 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, and a metal gate structure over the semiconductor substrate and the gate dielectric. The metal gate structure includes a first metal material. The integrated circuit further includes a seal formed on sidewalls of the metal gate structure. The integrated circuit further includes a dielectric film on the metal gate structure, the dielectric film including a first metal oxynitride comprising the first metal material and directly on the metal gate structure without extending over the seal formed on sidewalls of the metal gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.