Etching method for SiC substrate and holding container
US10388536B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 17, 2015 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Nov 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67063
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.