Image sensor including one or more microlenses provided within a metallization layer
US10388686B2 · kind B2 · utility
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Key dates
| Filing date | Nov 21, 2016 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Nov 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A image sensor includes a semiconductor substrate with a photosensitive region. Metallization layers are stacked over the semiconductor substrate. Each metallization layer includes an etch stop layer and a dielectric layer on the etch stop layer. At least one metallization layer includes one or more microlenses positioned over the photosensitive region. The one or more microlenses are integrally formed by the etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.