Semiconductor device and method for forming n-type conductive channel in diamond using heterojunction

US10388751B2 · kind B2 · utility

Assignee

• The 13ᵗʰ Research Institute Of China Electronics Technology Group Corporation · CN

Inventors

• Jingjing Wang · Shanghai, CN
• Zhihong Feng · Shijiazhuang, CN
• Cui Yu · Shijiazhuang, CN
• Chuangjie Zhou · Shijiazhuang, CN
• Qingbin Liu · Shijiazhuang, CN
• Zezhao He · Shijiazhuang, CN

Key dates

• Filing date: Oct 27, 2017
• Grant date: Aug 20, 2019
• Expiry date: Oct 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02664
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present application discloses a semiconductor device and a method for forming an n-type conductive channel in a diamond using a heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method comprises: forming a diamond layer on a substrate; and depositing a ternary compound having a donor characteristic and graded components on an upper surface of the diamond layer to form a first donor layer, forming a graded heterojunction at an interface between the diamond layer and the first donor layer, forming two-dimensional electron gas at one side of the diamond layer adjacent to the graded heterojunction, and using the two-dimensional electron gas as the n-type conductive channel. The method enables a concentration and a mobility of carriers in the n-type diamond channel to reach 1013 cm−2 and 2000 cm2/V·s respectively.