Scalable current sense transistor
US10388782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2014 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Jan 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device includes a main transistor and a sense transistor. The main transistor is disposed in a semiconductor body and includes a plurality of sections which are individually controllable via separate gate electrodes disposed above the semiconductor body. The sense transistor is disposed in the same semiconductor body as the main transistor and has the same number of individually controllable sections as the main transistor. Each individually controllable section of the sense transistor is configured to mirror current flowing through one of the individually controllable sections of the main transistor and is connected to the same gate electrode as that individually controllable section of the main transistor. An electronic circuit that includes the semiconductor device and a current sense circuit that outputs a current sense signal representing the current mirrored by the sense transistor is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.