LDMOS transistors for CMOS technologies and an associated production method

US10388785B2 · kind B2 · utility

Assignee

• X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

• Thomas Uhlig · Dresden, DE
• Lutz Steinbeck · Dresden, DE

Key dates

• Filing date: Oct 31, 2017
• Grant date: Aug 20, 2019
• Expiry date: Oct 31, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116

Abstract

In a semiconductor component or device, a lateral power effect transistor is produced as an LDMOS transistor in such a way that, in combination with a trench isolation region (12) and the heavily doped feed guiding region (28, 28A), an improved potential profile is achieved in the drain drift region (8) of the transistor. For this purpose, in advantageous embodiments, it is possible to use standard implantation processes of CMOS technology, without additional method steps being required.