Deep trench isolation (DTI) bounded single photon avalanche diode (SPAD) on a silicon on insulator (SOI) substrate
US10388816B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 22, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Dec 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/959
Abstract
A semiconductor on insulator substrate includes a semiconductor support layer, a buried insulating layer over the semiconductor support layer and an epitaxial semiconductor layer over the buried insulating layer. A deep trench isolation penetrates completely through the epitaxial semiconductor layer to the buried insulating layer to electrically insulate a first region of the epitaxial semiconductor layer from a second region of the epitaxial semiconductor layer. A single photon avalanche diode (SPAD) includes an anode formed by the first region of the epitaxial semiconductor layer and a cathode formed by a well located within the first region of the epitaxial semiconductor layer. An ancillary circuit for the SPAD is located in the second region of the epitaxial semiconductor layer and electrically coupled to the SPAD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.