Radiation-emitting semiconductor device

US10388829B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Adam Bauer · Donaustauf, DE
• Andreas Loeffler · Neutraubling, DE

Key dates

• Filing date: Apr 13, 2016
• Grant date: Aug 20, 2019
• Expiry date: Apr 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/811

Abstract

The invention describes a radiation-emitting semiconductor component (100) having a first semiconductor layer sequence (10) which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (20), a first electrode area (1) and a second electrode area (2). It is provided that the second semiconductor layer sequence (20) has a quantum pot structure (21) with a quantum layer structure (22) and a barrier layer structure (23) and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence (20) by the first electrode area (1) and the second electrode area (2).