Single crystal piezoelectric RF resonators and filters
US10389331B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 18, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Sep 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A filter package comprising an array of piezoelectric films comprising an array of mixed single crystals that each comprise doped Aluminum Nitride, typically AlxGa(1-x)N or ScxAl(1-x)N, that is sandwiched between an array of lower electrodes and an array of upper electrodes comprising metal layers and silicon membranes with cavities thereover: the array of lower electrodes being coupled to an interposer with a first cavity between the array of lower electrodes and the interposer; the array of silicon membranes having a known thickness and attached over the array of upper electrodes with an array of upper cavities, each upper cavity between a silicon membrane of the array and a common silicon cover; each upper cavity aligned with a piezoelectric film, an upper electrode and silicon membrane, the upper cavities having side walls comprising SiO2; the individual piezoelectric films, their upper electrodes and silicon membranes thereover being separated from adjacent piezoelectric films, upper electrodes and silicon membranes by a passivation material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.