Plasma CVD apparatus
US10392703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Dec 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2245/40
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma CVD apparatus is provided. The plasma CVD apparatus includes: a chamber forming a plasma space; and a power introduction terminal arranged in a terminal insertion hole that extends through a wall of the chamber. The power introduction terminal includes an insulator having a through hole and a rod-like electrical conductor inserted in the through hole. One end of the conductor is arranged in the chamber and the other end of the conductor is electrically connected to a power source that supplies power into the chamber. A gap between an inner wall of the insulator and the rod-like electrical conductor is less than 2 mm. A distance from one end of the insulator, which is arranged in the plasma space inside the chamber, to a contact point between the insulator and the conductor is greater than 10 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.