Perpendicular magnetic layer and magnetic device including the same
US10395809B2 · kind B2 · utility
0Cited by
5References
20Claims
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Key dates
| Filing date | May 10, 2017 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | May 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (Mn1−xGax)Ny layer (0<x≤0.5 and 0<y<0.1) formed by providing nitrogen (N) into a MnGa alloy while adjusting a nitrogen amount. The perpendicular magnetic layer can be formed flat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.