Thin film capacitor and manufacturing method thereof
US10395842B2 · kind B2 · utility
1Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2017 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor includes a capacitor body formed by alternately stacking first and second electrode layers and a dielectric layer on a substrate, and having the second electrode layer disposed in an uppermost portion thereof, and a stress alleviation layer formed on the uppermost second electrode layer. The stress alleviation layer is formed of a material having a coefficient of thermal expansion higher than those of the substrate and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.