Semiconductor device and manufacturing method for the same
US10395975B2 · kind B2 · utility
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1References
19Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 11, 2015 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Apr 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor substrate where a plurality of elements or penetration electrodes are arranged and a trench is arranged to insulate and separate the plurality of elements or penetrating elements by surrounding the plurality of elements or penetration electrodes. The trench is arranged to penetrate both sides of the semiconductor substrate, and has an inner part where a space is arranged. Accordingly, it is possible to configure a semiconductor device having a structure to suppress insulation breakdown while simplifying a manufacturing process and improving yield of product manufacture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.