Unit pixel of image sensor, image sensor including the same and method of manufacturing image sensor
US10396119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2018 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Feb 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.