Patent · US Active

Self-assembly pattering for fabricating thin-film devices

US10396218B2 · kind B2 · utility

1Cited by
18References
24Claims
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Key dates

Filing dateSep 2, 2015
Grant dateAug 27, 2019
Priority date
Expiry dateSep 18, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235); controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.