Patent · US Active

High-frequency amplifier apparatuses

US10396720B2 · kind B2 · utility

5Cited by

9References

19Claims

0Family size

Assignee

TRUMPF HUETTINGER GMBH + CO. KG · DE

Inventors

Andre Grede · Glückstadt, DE
Alexander Alt · Glückstadt, DE
Daniel Gruner · Müllheim, DE
Anton Labanc · Ehrenkirchen, DE

Key dates

Filing date	Dec 27, 2017
Grant date	Aug 27, 2019
Priority date	—
Expiry date	Dec 27, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2201/10166
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

High-frequency amplifier apparatuses suitable for producing output powers of at least 1 kW at frequencies of at least 2 MHz for plasma excitation are disclosed. These high-frequency amplifiers include two transistors, the source or emitter connections of which are each connected to a ground connection point. The transistors can have an identical design and are arranged on a multilayer printed circuit board. The apparatus also includes a power transformer, the primary winding of which is connected to the drain or collector connections of the transistors. The primary winding and the secondary winding of the power transformer are each in the form of planar conductor tracks which are arranged in different upper layers of the multilayer printed circuit board.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.