Image sensor with high dynamic range
US10397503B2 · kind B2 · utility
3Cited by
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29Claims
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Key dates
| Filing date | Dec 13, 2016 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Aug 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photodiode produces photogenerated charges in response to exposure to light. An integration period collects the photogenerated charges. Collected photogenerated charges in excess of an overflow threshold are passed to an overflow sense node. Remaining collected photogenerated charges are passed to a sense node. A first signal representing the overflow photogenerated charges is read from the overflow sense node. A second signal representing the remaining photogenerated charges is read from the sense node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.