Method for manufacturing metal chalcogenide thin film and thin film manufactured thereby
US10400331B2 · kind B2 · utility
4Cited by
0References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 10, 2015 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Feb 10, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to the manufacturing of a heteroelement thin film, and particularly to a method for manufacturing a metal chalcogenide thin film and the thin film manufactured thereby. The present invention, which relates to a method for manufacturing a metal chalcogenide thin film, may comprise the steps of: supplying a vaporized metal precursor; supplying a chalcogen-containing gas; and forming a thin film by reacting the metal precursor with the chalcogen-containing gas on a growth substrate at a first temperature condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.