Optoelectronic device

US10401656B2 · kind B2 · utility

Assignee

• Rockley Photonics Limited · GB

Inventors

• Guomin Yu · Glendora, US
• Hooman Abediasl · Los Angeles, US
• Damiana Lerose · Pasadena, US
• Amit Singh Nagra · Altadena, US
• Pradeep Srinivasan · Fremont, US
• Haydn Frederick Jones · Grafton, GB

Key dates

• Filing date: Sep 27, 2018
• Grant date: Sep 3, 2019
• Expiry date: Sep 27, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P80/30
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.