Microwave plasma reactor for manufacturing synthetic diamond material
US10403477B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2011 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Dec 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32284
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TM011 resonant mode between the base and the top plate at said freq…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.