Laser polycrystallization apparatus
US10403499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2017 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Dec 20, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser polycrystallization apparatus including: a light source for emitting a laser beam; a diffraction grating for receiving the laser beam from the light source, changing a path and a magnitude of the received laser beam, and outputting the changed laser beam; a light split portion for splitting the laser beam received from the diffraction grating; and a light superposition portion for superposing the split laser beams received from the light split portion and irradiating the superposed split laser beams to a substrate. An angle between the laser beam irradiated to an incidence surface of the diffraction grating from the light source and a line substantially perpendicular to an emission surface of the diffraction grating is an acute angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.