Method to form hybrid SiGe fin

US10403546B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Hao Deng · Shanghai, CN
• Jianhua Xu · Kunshan, CN
• Feng Zhou · Shanghai, CN
• Xiaojun Yang · Port Barrington, US

Key dates

• Filing date: Mar 19, 2018
• Grant date: Sep 3, 2019
• Expiry date: Mar 19, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A method for manufacturing a semiconductor device includes providing a semiconductor structure having a semiconductor substrate, a dielectric layer on the semiconductor substrate, and a hardmask on a second portion of the dielectric layer while exposing a first portion of the dielectric layer; forming a copolymer on the semiconductor structure; performing an annealing treatment such that the copolymer forms a staggered configuration of a first monomer and a second monomer; removing the first monomer; performing a first etching process on the first portion using the second monomer as a mask to form a first trench extending to the semiconductor substrate; removing the second monomer and the first hardmask; and epitaxially growing a first semiconductor fin in the first trench.