Image sensors
US10403673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2017 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Jul 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor includes a transfer gate including a gate buried portion extending into a semiconductor substrate from a surface of the semiconductor substrate, a plurality of photoelectric conversion parts that are disposed in the semiconductor substrate on a side of the gate buried portion and vertically overlap each other, and a plurality of floating diffusion parts that are apart from and vertically overlap each other in the semiconductor substrate on other side of the gate buried portion, wherein at least one of the floating diffusion parts is positioned at a height of at least one of corresponding photoelectric conversion parts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.